Spin-Orbit mediated spin relaxation in monolayer MoS2

We study the intra-valley spin-orbit mediated spin relaxation in monolayers of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a Rashba-like coupling due to the breaking of the out-of-plane inversion symmetry are considered. We show that, in the hole doped regime, the out-of-plane spin relaxation is not very efficient since the spin splitting of the valence band tends to stabilize the spin polarization in this direction. We obtain spin lifetimes larger than nanoseconds, in agreement with recent valley polarization experiments.Comment: final version, 9 pages, 5 figure

Collisionless Hydrodynamics of Doped Graphene in a Magnetic Field

The electrodynamics of a two-dimensional gas of massless fermions in graphene is studied by a collisionless hydrodynamic approach. A low-energy dispersion relation for the collective modes (plasmons) is derived both in the absence and in the presence of a perpendicular magnetic field. The results for graphene are compared to those for a standard two-dimensional gas of massive electrons. We further compare the results within the classical hydrodynamic approach to the full quantum mechanical calculation in the random phase approximation. The low-energy dispersion relation is shown to be a good approximation at small wave vectors. The limitations of this approach at higher order is also discussed.Comment: 7 pages, 1 figur

Spin-density-wave instability in graphene doped near the van Hove singularity

We study the instability of the metallic state towards the formation of a new ground state in graphene doped near the van Hove singularity. The system is described by the Hubbard model and a field theoretical approach is used to calculate the charge and spin susceptibility. We find that for repulsive interactions, within the random phase approximation, there is a competition between ferromagnetism and spin-density wave (SDW). It turns out that a SDW with a triangular geometry is more favorable when the Hubbard parameter is above the critical value U_c(T), which depends on the temperature T, even if there are small variations in the doping. Our results can be verified by ARPES or neutron scattering experiments in highly doped graphene.Comment: 5 pages, 5 figures, 1 tabl

Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of semiconducting transition metal dichalcogenides with the form $M$S$_2$, where $M$=Mo or W. The electronic structure is considered within a six bands tight-binding model, which accounts for the relevant combination of $d$ orbitals of the metal $M$ and $p$ orbitals of the chalcogen $S$. We use the Kubo formula for the calculation of the conductivity in samples with different distributions of disorder. We find that $M$ and/or S defects create mid-gap states that localize charge carriers around the defects and which modify the optical and transport properties of the material, in agreement with recent experiments. Furthermore, our results indicate a much higher mobility for $p$-doped WS$_2$ in comparison to MoS$_2$

Spin-wave amplification and lasing driven by inhomogeneous spin transfer torques

We show that an inhomogeneity in the spin-transfer torques in a metallic ferromagnet under suitable conditions strongly amplifies incoming spin waves. Moreover, at nonzero temperatures the incoming thermally occupied spin waves will be amplified such that the region with inhomogeneous spin transfer torques emits spin waves spontaneously, thus constituting a spin-wave laser. We determine the spin-wave scattering amplitudes for a simplified model and set-up, and show under which conditions the amplification and lasing occurs. Our results are interpreted in terms of a so-called black-hole laser, and could facilitate the field of magnonics, that aims to utilize spin waves in logic and data-processing devices.Comment: 5 pages, 4 figure

Self-Consistent Screening Approximation for Flexible Membranes: Application to Graphene

Crystalline membranes at finite temperatures have an anomalous behavior of the bending rigidity that makes them more rigid in the long wavelength limit. This issue is particularly relevant for applications of graphene in nano- and micro-electromechanical systems. We calculate numerically the height-height correlation function $G(q)$ of crystalline two-dimensional membranes, determining the renormalized bending rigidity, in the range of wavevectors $q$ from $10^{-7}$ \AA$^{-1}$ till 10 \AA$^{-1}$ in the self-consistent screening approximation (SCSA). For parameters appropriate to graphene, the calculated correlation function agrees reasonably with the results of atomistic Monte Carlo simulations for this material within the range of $q$ from $10^{-2}$ \AA$^{-1}$ till 1 \AA$^{-1}$. In the limit $q\rightarrow 0$ our data for the exponent $\eta$ of the renormalized bending rigidity $\kappa_R(q)\propto q^{-\eta}$ is compatible with the previously known analytical results for the SCSA $\eta\simeq 0.82$. However, this limit appears to be reached only for $q<10^{-5}$ \AA$^{-1}$ whereas at intermediate $q$ the behavior of $G(q)$ cannot be described by a single exponent.Comment: 5 pages, 4 figure

Strain-induced bound states in transition-metal dichalcogenide bubbles

This is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/ab0113We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS2, WSe2, WS2 and MoSe2, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriersWe acknowledge funding from the Graphene Flagship, contract CNECTICT-604391, from the Comunidad de Madrid through Grant MAD2D-CM, S2013/MIT-3007, from the Spanish Ministry of Economy and Competitiveness through Grants No. RYC-2011-09345, RYC-2016-20663, FIS2015-65706-P, FIS2016-80434-P (AEI/FEDER, EU) and the María de Maeztu Programme for Units of Excellence in R&D (MDM-2014-0377